Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 132-137

  Miao, Z L ^a,b   Lu, W ^c   Chen, P P ^a,b   Li, Z F ^a,b   Cai, W Y ^a   Yuan, X Z ^a   Liu, P ^a   Shi, G L ^a   Xu, W L ^a   Shen, X C ^a   Chen, C M ^b   Zhu, D Z ^b   Hu, J ^b   Li, M Q ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c NONE

Author keywords

A3. Molecular beam epitaxy; B2. Laser diodes; B2. Semiconductor III V materials

Indexed keywords

DIFFUSION IN SOLIDS; ION IMPLANTATION; MASKS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PROTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

ALUMINUM GALLIUM ARSENIDE; ASYMMETRICALLY COUPLED DOUBLE QUANTUM WELLS (ACDQW); PHOTOMODULATED REFLECTANCE SPECTROSCOPY; PROTON IMPLANTATION INDUCED INTERMIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035399210     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00651-0     Document Type: Conference Paper

References (17)