Proton irradiation of n-type GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 446-449

  Goodman, S A ^a   Auret, F D ^a   Ridgway, M ^b   Myburg, G ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Deep level transient spectroscopy; Defects; GaAs; Proton irradiation

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; PROTON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DEFECT CLUSTERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033513838     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00755-1     Document Type: Article

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