Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages

  Ahmed, S ^a   Gwilliam, R ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TEMPERATURE; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

DAMAGE INDUCED DEFECT; ISOLATION IMPLANT; PROTON IMPLANTATION;

ION IMPLANTATION;

EID: 0035326590     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/5/103     Document Type: Letter

References (14)