Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

Electronics Letters

Volumn 40, Issue 23, 2004, Pages 1487-1488

  Gollub, D ^a   Kamp, M ^a   Forchel, A ^a   Seufert, J ^b   Bank, S R ^c   Wistey, M A ^c   Yuen, H B ^c   Goddard, L L ^c   Harris Jr , J S ^c  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANTIMONY; CLADDING (COATING); DOPING (ADDITIVES); ELECTRIC CURRENTS; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SOLDERING; WAVEGUIDES;

CONTINUOUS-WAVE OPERATIONS; LATERAL GRATING; SINGLEMODE EMISSIONS; STRAIN COMPENSATING BARRIERS;

LASERS;

EID: 9144256266     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046601     Document Type: Article

References (8)

1. Gollub, D., Moses, S., Fischer, M., and Forchel, A.: '1.42 μm continuous-wave operation of GaInNAs laser diodes', Electron. Lett., 2003, 39, (10), pp. 777-778
2. Fischer, M., Reinhardt, M., and Forchel, A.: 'GaInAsN/GaAs laser diodes at 1.52 μm', Electron. Lett., 2000, 36, (14), pp. 1208-1209
3. Bank, S.R., Wistey, M.A., Goddard, L.L., Yuen, H.B., and Harris, J.S., Jr.: 'Low-threshold, continuous-wave, 1.5 μm GaInNAsSb lasers grown on GaAs', IEEE J. Quantum Electron., 2004, 40, (6), pp. 656-664
4. Kamp, M., Hofmann, J., Forchel, A., Schäfer, F., and Reithmaier, J.P.: 'Low-threshold high-quantum-efficiency laterally gain coupled InGaAs/AlGaAs distributed feedback lasers', Appl. Phys. Lett., 1999. 74, (4), pp. 483-485
5. Gollub, D., Fischer, M., and Forchel, A.: 'Towards high performance GaInAsN/GaAsN laser diodes in the 1.5 μm range', Electron. Lett., 2002, 38, (20), pp. 1183-1184
6. Gollub, D., Moses, S., Fischer, M., Kamp, M., and Forchel, A.: 'GaInNAs-based distributed feedback laser diodes emitting at 1.5 μm', Electron. Lett., 2004, 40, (7), pp. 427-428
7. Spruytte. S.G., Larson, M.C., Wampler, W., Coldren, C.W., Peterson, H.E., and Harris, J.S.: 'Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy', J. Crystal Growth, 2001, 227-228, pp. 506-515
8. Gollub, D., Fischer, M., Kamp, M., and Forchel, A.: '1.3-μm continuous wave GaInNAs/GaAs distributed feedback laser diodes', Appl. Phys. Lett., 2002, 81, (23), pp. 4330-4331