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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 A, 2004, Pages 6217-6220

Difference in thermal degradation behavior of ZrO2 and HfO 2 anodized capacitors

(7) Kamijyo, Masahiro a Onozuka, Tomotake a Yoshida, Naoto a Shinkai, Satoko a,b Sasaki, Katsutaka a Yamane, Misao a Abe, Yoshio a

a KITAMI INSTITUTE OF TECHNOLOGY (Japan)

b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE (Japan)

Author keywords

Anodized thin film capacitor; Auger depth profile; Difference of diffusion species; HfO2; Thermal degradation behavior; ZrO2

Indexed keywords

ANODIZED THIN FILM CAPACITORS; AUGER DEPTH PROFILE; HFO2; ROOM TEMPERATURE; ZRO2;

ANODIC OXIDATION; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE MEASUREMENT; CRYSTAL MICROSTRUCTURE; DIFFUSION; HAFNIUM COMPOUNDS; HEAT RESISTANCE; HEAT TREATMENT; PYROLYSIS; SPUTTER DEPOSITION; THIN FILM DEVICES; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

CAPACITORS;

EID: 9144219901 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.6217 Document Type: Article

Times cited : (6)

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