Lateral compensation structures can break the silicon limit

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 1, Issue , 2004, Pages 585-590

  Tolksdorf, C ^a   Schulze, J ^a   Eisele, I ^a   Deboy, G ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDE; COMPENSATION STRUCTURES; SUPERJUNCTION DEVICES; VOLTAGE POWER;

COOLING SYSTEMS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; HEAT LOSSES; MOSFET DEVICES;

SILICON;

EID: 8744313899     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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