SiC donor doping by 300°C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 945-948

  Poggi, A ^a   Nipoti, R ^a   Moscatelli, F ^b   Cardinali, G C ^a   Canino, M ^a  

^a CNR   (Italy)

^b UNIVERSITY OF PERUGIA   (Italy)

Author keywords

Annealing temperature; Diode performance; Doping activation; P low temperature implantation; Surface damage

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); CURRENT DENSITY; DIODES; DOPING (ADDITIVES); HETEROJUNCTIONS; LEAKAGE CURRENTS; SILICON CARBIDE;

ANNEALING TEMPERATURE; DIODE PERFORMANCE; DOPING ACTIVATION; P LOW TEMPERATURE IMPLANTATION; SURFACE DAMAGE;

ION IMPLANTATION;

EID: 8744291046     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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