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Volumn 184, Issue 1-4, 2001, Pages 317-322
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A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures
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Author keywords
Ion implantation; MOSFET; Oxidation; Silicon carbide
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Indexed keywords
ANNEALING;
GATES (TRANSISTOR);
ION IMPLANTATION;
LOW TEMPERATURE EFFECTS;
MOSFET DEVICES;
OXIDATION;
SURFACE ROUGHNESS;
CHANNEL MOBILITIES;
SILICON CARBIDE;
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EID: 0035852189
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(01)00511-6 Document Type: Article |
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Times cited : (5)
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References (11)
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