Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 621-624

  Poggi, A ^a   Nipoti, R ^a   Cardinali, G G ^a   Moscatelli, F ^a,b  

^a CNR   (Italy)

^b UNIVERSITY OF PERUGIA   (Italy)

Author keywords

C V; EBIC; I V; Ion Implantation; Planar Diodes; SEM

Indexed keywords

ANNEALING; CAPACITANCE; CATHODES; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON BEAMS; INDUCED CURRENTS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING FILMS; SILICON CARBIDE;

DOPING CONCENTRATION;

DIODES;

EID: 0242496533     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

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6. A. Poggi, R. Nipoti, G.C.Cardinali, F.Moscatelli: submitted to Appl. Phys. Lett.