High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 A, 2003, Pages

  Ujihara, Toru ^a   Obara, Kazuo ^a   Usami, Noritaka ^a   Fujiwara, Kozo ^a   Sazaki, Gen ^a   Shishido, Toetsu ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Lifetime; LPE; Raman spectroscopy; Silicon thin film; Solar cell

Indexed keywords

CRYSTALLINE MATERIALS; GOLD ALLOYS; LIQUID PHASE EPITAXY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SOLAR CELLS; SOLVENTS; TEMPERATURE;

CRYSTALLINE SILICON; MINORITY CARRIER; MONOCRYSTALLINE SILICON; SILICON THIN FILM;

SILICON;

EID: 0038060620     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l217     Document Type: Letter

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