Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth

Journal of Crystal Growth

Volumn 233, Issue 1-2, 2001, Pages 219-225

  Kato, Tomohisa ^a   Nishizawa, Shin Ichi ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. defects; A1. etching; A2. single crystal growth; A3. vapor phase epitaxy; B1. inorganic compounds; B2. semi conducting silicon compounds

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; SURFACE STRUCTURE;

DISLOCATION CONSTRAINTS; ETCH BACK PROCESSES;

VAPOR PHASE EPITAXY;

EID: 0035501987     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01578-0     Document Type: Article

References (7)