-
1
-
-
0033726416
-
Monolithic bidirectional switch. I. Device concept
-
R. Sittig, F. Heinke "Monolithic bidirectional switch. I. Device concept", Solid-State Elec. 44 (2000), pp 1387-1392.
-
(2000)
Solid-state Elec.
, vol.44
, pp. 1387-1392
-
-
Sittig, R.1
Heinke, F.2
-
2
-
-
0033686889
-
Monolithic bidirectional switch. II. Simulation of device characteristics
-
F. Heinke, R. Sittig "Monolithic bidirectional switch. II. Simulation of device characteristics", Solid-State Elec. 44 (2000), pp 1393-1398.
-
(2000)
Solid-state Elec.
, vol.44
, pp. 1393-1398
-
-
Heinke, F.1
Sittig, R.2
-
3
-
-
8744240728
-
-
German Patent DE 198 48 596 C 2, US Patent US 6,661,036 B1
-
German Patent DE 198 48 596 C 2, US Patent US 6,661,036 B1.
-
-
-
-
5
-
-
0033225811
-
Minimum lateral extension of planar junction terminations
-
U. Kuhlmann, R. Sittig "Minimum lateral extension of planar junction terminations", Solid-State Elec. 43 (1999), pp 2005-2010.
-
(1999)
Solid-state Elec.
, vol.43
, pp. 2005-2010
-
-
Kuhlmann, U.1
Sittig, R.2
-
6
-
-
8744298616
-
Characterization methods for power device materials and processing
-
Leuven (Sep.) The Electrochemical Society ECS PV 99-16
-
H.J. Schulze "Characterization methods for power device materials and processing", in Proceedings of the symposium "Analytical and diagnostic techniques for semiconductor materials, devices, and processes", Leuven (Sep. 1999), The Electrochemical Society ECS PV 99-16, pp 271-286.
-
(1999)
Proceedings of the Symposium "Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes"
, pp. 271-286
-
-
Schulze, H.J.1
-
7
-
-
0032598941
-
Predicted electrical characteristics of 4500 V super multi-resurf MOSFETs
-
Toronto, (May)
-
Y.Kawaguchi, K. Nakamura, A. Yahata and A. Nakagawa "Predicted electrical characteristics of 4500 V super multi-resurf MOSFETs", in Proceedings of the "International Symposium of Power Semiconductor Devices and ICs", ISPSD'99, Toronto, (May 1999), pp 95-98.
-
(1999)
Proceedings of the "International Symposium of Power Semiconductor Devices and ICs", ISPSD'99
, pp. 95-98
-
-
Kawaguchi, Y.1
Nakamura, K.2
Yahata, A.3
Nakagawa, A.4
-
8
-
-
1242276409
-
The super junction bipolar transistor: A new silicon power device concept for ultra low loss switching applications at medium to high voltages
-
F.D. Bauer "The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages", Solid-State Elec. 48 (2004), pp 705-714.
-
(2004)
Solid-state Elec.
, vol.48
, pp. 705-714
-
-
Bauer, F.D.1
-
9
-
-
1242276399
-
Steady-state and transient characteristics of 10 kV 4H-SiC diodes
-
M.E. Levinshtein, T.T. Mnatsakanov, P.A. Ivanov, R. Singh, J.W. Palmour, S.N. Yurkov "Steady-state and transient characteristics of 10 kV 4H-SiC diodes", Solid-State Elec. 48 (2004), pp 807-811.
-
(2004)
Solid-state Elec.
, vol.48
, pp. 807-811
-
-
Levinshtein, M.E.1
Mnatsakanov, T.T.2
Ivanov, P.A.3
Singh, R.4
Palmour, J.W.5
Yurkov, S.N.6
-
10
-
-
0036051387
-
Extending the boundary limits of high voltage IGBTs and diodes to above 8kV
-
Santa Fe, (June)
-
M. Rahimo, A. Kopta, S. Eicher, N. Kaminski, F. Bauer, U. Schlapbach, S. Linder, "Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8kV", in Proceedings of the "International Symposium on Power Semiconductor Devices and ICs", ISPSD'02, Santa Fe, (June 2002), pp 41-44.
-
(2002)
Proceedings of the "International Symposium on Power Semiconductor Devices and ICs", ISPSD'02
, pp. 41-44
-
-
Rahimo, M.1
Kopta, A.2
Eicher, S.3
Kaminski, N.4
Bauer, F.5
Schlapbach, U.6
Linder, S.7
|