Monolithic bidirectional switch. I. Device concept

Solid-State Electronics

Volumn 44, Issue 8, 2000, Pages 1387-1392

  Sittig, R ^a   Heinke, F ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MOS DEVICES; OHMIC CONTACTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

MONOLITHIC BIDIRECTIONAL SWITCHES;

SEMICONDUCTOR SWITCHES;

EID: 0033726416     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00078-2     Document Type: Article

References (2)

1. Amemiya Y., Sugeta T., Mizushima Y. Novel low-loss and high-speed diode utilizing an ideal ohmic contact. IEEE Trans Electron Dev. ED-29:1981;236-243.
2. Sze SM. Physics of semiconductor devices, 2nd ed. New York: Wiley, 1981. p. 437.