Minimum lateral extension of planar junction terminations

Solid-State Electronics

Volumn 43, Issue 11, 1999, Pages 2005-2010

  Kuhlmann, U ^a   Sittig, R ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRIC BREAKDOWN; ELECTRIC SPACE CHARGE; INTEGRAL EQUATIONS; IONIZATION; NUMERICAL METHODS; OPTIMIZATION; POWER ELECTRONICS; REDUCTION; SEMICONDUCTOR DOPING;

DRASTIC REDUCTION; INTRINSIC SILICON; IONIZATION INTEGRALS; MINIMUM LATERAL EXTENSION; PLANAR JUNCTION TERMINATION; POWER DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 0033225811     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00167-7     Document Type: Article

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