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Volumn 1, Issue , 2004, Pages 287-292

A new approach to spatially controllable CVD

Author keywords

Chemical vapor deposition; Distributed parameter systems; Semiconductor manufacturing

Indexed keywords

PROGRAMMABLE REACTORS; REACTOR SYSTEMS; THERMAL COUPLING;

EID: 8744229551     PISSN: 07431619     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (9)
  • 2
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    • Process diagnostics and thickness metrology for the chemical vapor deposition of W from H2/WF6 using in-situ mass-spectrometry
    • Gougousi, T., Y. Xu, J.N. Kidder, Jr., G. W. Rubloff, and C. R. Tilford (2000) Process diagnostics and thickness metrology for the chemical vapor deposition of W from H2/WF6 using in-situ mass-spectrometry, J. Vac. Sci. Technol. B 18 1352-1363
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1352-1363
    • Gougousi, T.1    Xu, Y.2    Kidder Jr., J.N.3    Rubloff, G.W.4    Tilford, C.R.5
  • 5
    • 8744252987 scopus 로고
    • Programmable multizone gas injector for single-wafer semiconductor processing equipment, United State Patent 5,453,124
    • Moslehi, M. M, C. J. Davis and R. T. Matthews, (1995) Programmable multizone gas injector for single-wafer semiconductor processing equipment, United State Patent 5,453,124.
    • (1995)
    • Moslehi, M.M.1    Davis, C.J.2    Matthews, R.T.3
  • 7
    • 0034225666 scopus 로고    scopus 로고
    • Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy
    • Theodoropoulos, C., T. J. Mountziaris, H. K. Moffat and J. Han, (2000) Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy, J. Crystal Growth 217 65.
    • (2000) J. Crystal Growth , vol.217 , pp. 65
    • Theodoropoulos, C.1    Mountziaris, T.J.2    Moffat, H.K.3    Han, J.4
  • 8
    • 0006770497 scopus 로고    scopus 로고
    • Semiconductor and thin film applications of a quadrupole mass spectrometer
    • Waits, R. K., (1999) Semiconductor and thin film applications of a quadrupole mass spectrometer, J. Vac. Sci. Technol. A 17 1469-1478.
    • (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 1469-1478
    • Waits, R.K.1
  • 9
    • 0036883096 scopus 로고    scopus 로고
    • Thickness metrology and end-point control in WCVD process with SiH4/WF6 using in situ mass spectrometry
    • Xu, Y., T. Gougousi, L. Henn-Lecordier, Y. Liu, S. Cho and G.W. Rubloff (2002) Thickness metrology and end-point control in WCVD process with SiH4/WF6 using in situ mass spectrometry, J. Vac. Sci. Technol., B 20(6), 2351-2360.
    • (2002) J. Vac. Sci. Technol., B , vol.20 , Issue.6 , pp. 2351-2360
    • Xu, Y.1    Gougousi, T.2    Henn-Lecordier, L.3    Liu, Y.4    Cho, S.5    Rubloff, G.W.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.