Characterization of multiple Si/SiO 2 interfaces in silicon-on-insulator materials via second-harmonic generation

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3095-3097

  Jun, B ^a   White, Y V ^b   Schrimpf, R D ^a   Fleetwood, D M ^a,b   Brunier, F ^c   Bresson, N ^c,d   Cristoloveanu, S ^d   Tolk, N H ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

^d Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; ELECTRIC FIELD INDUCED SECOND-HARMONIC (EFISH) SIGNAL; ELECTRON INJECTION; ENERGY BARRIER;

CHARGE TRANSFER; ELECTRIC FIELDS; ELECTRON TUNNELING; ETCHING; HARMONIC GENERATION; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

SILICA;

EID: 8644238217     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1807011     Document Type: Article

References (9)

1. J. G. Mihaychuk, J. Bloch, and H. M. van Driel, Opt. Lett. 20, 2063 (1995).
2. G. Lüpke, Surf. Sci. Rep. 35, 75 (1999).
3. W. Wang, G. Lüpke, M. Di Ventra, S. T. Pentelides, J. M. Gilligan, N. H. Talk, I. C. Kizilyalli, P. K. Roy, G. Margaritondo, and G. Lucovsky, Phys. Rev. Lett. 81, 4224 (1998).
4. J. Bloch, J. G. Mihaychuk, and H. M. van Driel, Phys. Rev. Lett. 77, 920 (1996).
5. R. Pasternak, Y. V. Shirokaya, Z. Marka, J. K. Miller, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, R. D. Schrimpf, and D. M. Fleetwood, Nucl. Instrum. Methods Phys. Res. A 514, 150 (2003).
6. Z. Marka, S. K. Singh, W. Wang, S. C. Lee, J. Kavich, B. Glebov, S. N. Rashkeev, A. P. Karmarkar, R. G. Albridge, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, and N. H. Tolk, IEEE Trans. Nucl. Sci. 47, 3256 (2000)
7. S. Cristoloveanu, D. Munteanu, and M. S. T. Liu, IEEE Trans. Electron Devices 47, 1018 (2000).
8. S. Cristoloveanu and S. Williams, IEEE Electron Device Lett. 13, 102 (1992).
9. G. Ghibaudo, Electron. Lett. 13, 543 (1988).