Influence of reactor pressure on the formation of PZT thin films by liquid delivery MOCVD

Integrated Ferroelectrics

Volumn 46, Issue , 2002, Pages 125-131

  Ueda, Yoshiki ^a   Abe, Norikazu ^a   Otani, Yohei ^a   Miyake, Masato ^a   Okamura, Soichiro ^a   Shiosaki, Tadashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Liquid delivery; MOCVD; PZT thin films; Reactor pressure

Indexed keywords

FERROELECTRICITY; LEAD; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; REMANENCE; TITANIUM; ZIRCONIUM;

LIQUID DELIVERY; PZT THIN FILMS; REACTOR PRESSURES; REMANENT POLARIZATION;

FERROELECTRIC THIN FILMS;

EID: 8644221896     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/713718240     Document Type: Article

References (13)

1. A. Mannish, Ferroelectrics, 102 (1990) 69.
2. M. Sayer, G. Yi and M. Sedlar, Integrated Ferroelectrics, 7 (1995) 247.
3. T. Hase, T. Sakuma, K. Amanuma, T. Mori, A. Ochi and Y. Miyasaka, Integrated Ferroelectrics, 8 (1995) 89.
4. S. Yamauchi, H. Tamura, M. yoshimaru and M. Ino, Jpn. J. Appl. Phys., 32 (1993) 4118.
5. T. Hase, K. Hirata, K. Amanuma, N. Hosokawa and Y. Miyasaka, Jpn. J. Appl. Phys., 33 (1994) 5244.
6. Y. Fukuda and K. Aoki, Jpn. J. Appl. Phys., 36 (1997) 5793.
7. T. Shiosaki, M. Shimizu and M. Kinoshita, Integrated Ferroelectrics, 7 (1995) 111.
8. M. Aratani, T. Ozeki and H. Funakubo, Jpn. J. Appl. Phys., 40 (2001) L343.
9. H. Fujisawa, K. Kita, M. Shimizu and H. Niu, Jpn. J. Appl. Phys., 40 (2001) 5551.
10. T. Li, P. Zawadzki and R. Stall: Integrated Ferroelectrics, 18 (1997) 155.
11. C. M. Foster, G. R. Bai, R. Csenesits, J. Vetrone, R. Jammy, L. A. Wills and J. Amano, J. Appl. Phys. 81 (1997) 2349.
12. T. Kawahara, M. Yamamuka, T. Makita, J. Naka, A. Yuuki, K. Ono, Jpn. J. Appl Phys. 33 (1994) 5129.
13. M. Miyake, K. Lee, S. Kawasaki, Y. Ueda, S. Okamura and T. Shiosaki, Jpn. J. Appl. Phys., 41 (2002) 241.