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Volumn 187, Issue , 2013, Pages 139-159

Electronic and Optical Properties of Silicon Carbide Nanostructures

Author keywords

Bright Exciton; Dark Exciton; Excitonic Effect; Large Binding Energy; Local Density Approximation

Indexed keywords


EID: 85103618801     PISSN: 0933033X     EISSN: 21962812     Source Type: Book Series    
DOI: 10.1007/978-1-4614-8169-0_7     Document Type: Chapter
Times cited : (3)

References (67)
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    • (1991) Nature , vol.354 , pp. 56
    • Iijima, S.1
  • 6
    • 85103667377 scopus 로고
    • Semiconductors: Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein, New Series
    • Hellwege, K.H., Madelung, O. (eds.), vol. , Pt. A. Springe, Berlin
    • Hellwege, K.H., Madelung, O. (eds.): Semiconductors: Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein, New Series, Group IV and III-V, vol. 17, Pt. A. Springe, Berlin (1982)
    • (1982) Group IV and III-V , vol.17
  • 9
    • 0003597031 scopus 로고
    • Harris, G.L. (ed.), Institution of Electrical Engineers, London
    • Harris, G.L. (ed.): Properties of Silicon Carbide. INSPEC, Institution of Electrical Engineers, London (1995)
    • (1995) Properties of Silicon Carbide. INSPEC
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    • Spataru, C.D., Ismail-Beigi, S., Capaz, R.B., Louie, S.G.: Carbon Nanotubes: Advanced Topics in the Synthesis, Structure, Properties and Applications vol. 111, p. 195. Springer, Heidelberg (2008)
    • Spataru, C.D., Ismail-Beigi, S., Capaz, R.B., Louie, S.G.: Carbon Nanotubes: Advanced Topics in the Synthesis, Structure, Properties and Applications vol. 111, p. 195. Springer, Heidelberg (2008)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.