First-principles study of n-type dopants and their clustering in SiC

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4298-4300

  Rurali, R ^a   Godignon, P ^a   Rebollo, J ^a   Hernandez E ^b   Ordejon P ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AGGREGATES; CRYSTAL LATTICES; DOPING (ADDITIVES); ION IMPLANTATION; IONIZATION; PARAMAGNETIC RESONANCE;

IONIZATION ENERGY;

SILICON CARBIDE;

EID: 0038112195     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1583870     Document Type: Article

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