Polarization sensitive behaviour of the band-edge transitions in ReS 2 and ReSe2 layered semiconductors

Journal of Physics Condensed Matter

Volumn 16, Issue 32, 2004, Pages 5937-5944

  Ho, C H ^a   Lee, H W ^a   Wu, C C ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ENERGY GAP; EXCITONS; LIGHT POLARIZATION; OPTICAL COMMUNICATION; PHOTODETECTORS; PROBABILITY; SENSITIVITY ANALYSIS;

BAND-EDGE TRANSITIONS; CHEMICAL VAPOR TRANSPORT METHOD; POLARIZED ENERGY GAPS; POLARIZED-THERMOREFLECTANCE (PTR);

RHENIUM COMPOUNDS;

EID: 4344626174     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/32/026     Document Type: Conference Paper

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