The influence of in-grown stacking faults on the reverse current-voltage characteristics of 4H-SiC schottky barrier diodes

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 885-888

  Harada, Shin ^a   Namikawa, Yasuo ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

In grown stacking fault; Leakage current; Shottky barrier diodes

Indexed keywords

EID: 85086681188     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-442-1.885     Document Type: Conference Paper

References (7)

1. Q. Wahab, A. Ellison, C Hallin, A. Henry, J. Di Persio, R. Martinez and E. Janzen: Mater. Sci. Forum Vol. 338-342 (2000) p1175
2. H. Saitoh, T. Kimoto and H. Matsunami: Mater. Sci. Forum Vol. 457-460 (2004) p997
3. S. Izumi, H. Tsuchida, I. Kamata and T. Tawara: Appl. Phys. Lett. Vol. 86, (2005) 202108
4. H. Fujiwara, T. Kimoto, T. Tojo and H. Matsunami: Appl. Phys. Lett. Vol. 87, (2005) 051912
5. T. Okada, T. Kimoto, H. Noda, T. Ebisui, H. Matsunami, F. Inoko: Jpn. J. Appl. Phys. Vol. 41, (2002) p6320
6. T. Okada, T.Kimoto, K. Yamai, H. Matsunami, F. Inoko: Mater. Sci. Eng. A361, (2003) 67
7. M. Benamara, X. Zhang, M.Skowronski, P. Ruterara, G. Nouet, J. J. Sumakeris, M. J. Paisley and M. J. O'Loughlin: Appl. Phys. Lett. Vol. 86, (2005) 021905