Whole-wafer mapping of dislocations in 4H-SiC epitaxy

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 295-298

  Stahlbush, R E ^a   Liu, K X ^a   Zhang, Q ^b   Sumakeris, J J ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

BPD; Dislocations; Epitaxial layer; Photoluminescence; PL imaging; Wafer mapping

Indexed keywords

EID: 85086680429     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-442-1.295     Document Type: Conference Paper

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