250 °c SiC power module package design

SAE Technical Papers

Volumn , Issue , 2008, Pages

  Ning, Puqi ^a   Lai, Rixin ^a   Huff, Daniel ^a   Wang, Fred ^a   Ngo, Khai D T ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER SYSTEMS; SILICON CARBIDE;

FABRICATION PROCESS; HIGH TEMPERATURE; JUNCTION TEMPERATURES; MATERIAL SELECTION; POWER MODULE; RELIABILITY TEST; SIC DEVICES;

SILICON COMPOUNDS;

EID: 85072464260     PISSN: 01487191     EISSN: 26883627     Source Type: Journal    
DOI: 10.4271/2008-01-2892     Document Type: Conference Paper

References (11)

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