Evaluation of power devices for automotive hybrid and 42V based systems

SAE Technical Papers

Volumn , Issue , 2004, Pages

  Campbell, Robert J ^a   Rajashekara, Kaushik ^a  

^a DELPHI CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENVIRONMENTAL TECHNOLOGY; FUEL CELLS; FUEL ECONOMY;

AUTOMOTIVE COMPANIES; COMPARATIVE STUDIES; ELECTRICAL ARCHITECTURE; ENABLING TECHNOLOGIES; ENVIRONMENTAL FRIENDLY VEHICLES; FUEL CELL VEHICLES; LOW EMISSION VEHICLES; POWER CONVERSION SYSTEMS;

POWER SEMICONDUCTOR DEVICES;

EID: 85072419774     PISSN: 01487191     EISSN: 26883627     Source Type: Journal    
DOI: 10.4271/2004-01-1682     Document Type: Conference Paper

References (13)

1. Massachusetts Institute of Technology 42V Consortium website, http://mit42v.mit.edu, ISO/CD 21848.4, January 23, 2003. Graphic by Harry Husted, Delphi Corporation.
2. Baliga B.J., Power Semiconductor Devices, 1st ed. Boston: PWS Publishing Company, 1996.
3. Baliga B.J., Modern Power Devices, 1st ed. New York: Wiley, 1987.
4. Onuki J., Koizumi M., Suwa M., "Reliability of Thick Al Wire Bonds in IGBT Modules for Traction Motor Drives" IEEE Transactions on Advanced Packaging, Vol 23, No. 1, pp. 108-112, February 2000. (Pubitemid 30583959)
5. Morozumi A., Yamada K., Seki Y., "Reliability of Power Cycling for IGBT Power Semiconductor Modules" IEEE Industry Applications Society Conference, September 2001, pp. 1912-1918. (Pubitemid 33058598)
6. AEC website: www.aecouncil.com
7. Spirito P., Breglio G., d'Alessandro V., Rinaldi N., "Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation" IEEE ISPSD 2002, June 2002, pp. 269-272.
8. Yamada J., Yu Y., Donlon J., Motto E., "A Low Inductance, High Current Dual IGBT Module" Power Electronics Technology 2002 Conference, October 2002, pp. 302-308.
9. Lorenz L., Deboy G., Knapp A., Marz M., "COOLMOS™-a new milestone in high voltage power MOS" IEEE ISPSD 1999, May 1999, pp. 3-10.
10. Elasser A., Chow T.P., "Silicon Carbide Benefits and Advantages for Power Electronics Circuits and Systems" Proc. IEEE, vol. 90, no. 6, pp. 969-986, June 2002. (Pubitemid 43785870)
11. Eastman L., Mishra U., "The Toughest Transistor Yet." IEEE Spectrum, May 2002, pp. 28-33
12. Stephani D., "Prospects of SiC Power Devices From the State of the Art to Future Trends" PCIM Europe 2002 Conference Proceedings, Nuremberg, Germany, May 2002.
13. Neudeck P.G., Okojie R.S., Chen L., "High-Temperature Electronics-A Role for Wide Bandgap Semiconductors?" Proc. IEEE, vol. 90, no. 6, pp. 1065-1075, June 2002.