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Volumn 89, Issue 4, 2001, Pages 299-303
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LACBED measurement of the chemical composition of a thin InxGa1-x As layer buried in a GaAs matrix
a
a
UNIV LILLE
(France)
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Author keywords
Chemical composition; Lacbed; Semiconductor quantum well
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Indexed keywords
ARSENIC;
COMPOSITION;
EPITAXIAL GROWTH;
GALLIUM;
INDIUM;
BRAGG LINE INTENSITIES;
ELECTRON DIFFRACTION;
ARSENIC;
GALLIUM;
INDIUM;
ARTICLE;
CHEMICAL COMPOSITION;
ELECTRON BEAM;
ELECTRON DIFFRACTION;
IMAGE ANALYSIS;
MEASUREMENT;
SEMICONDUCTOR;
TRANSMISSION ELECTRON MICROSCOPY;
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EID: 0035187676
PISSN: 03043991
EISSN: None
Source Type: Journal
DOI: 10.1016/S0304-3991(01)00091-2 Document Type: Article |
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Times cited : (9)
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References (18)
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