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Ultramicroscopy

Volumn 62, Issue 4, 1996, Pages 249-259

Local quantification of the composition in GaAs/AlxGa1-xAs structures by thickness fringe analysis

(2) Bonard, Jean Marc a Ganière, Jean Daniel a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; WAVEGUIDES;

ALUMINUM GALLIUM ARSENIDE; GRADED INDEX WAVEGUIDES; SEMICONDUCTOR LASER STRUCTURES; THICKNESS FRINGE ANALYSIS;

SEMICONDUCTOR MATERIALS;

ARTICLE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; STRUCTURE ANALYSIS;

EID: 0030111052 PISSN: 03043991 EISSN: None Source Type: Journal
DOI: 10.1016/0304-3991(95)00153-0 Document Type: Article

Times cited : (6)

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