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Volumn 65, Issue 12, 2002, Pages 1-10

Si-C bonding in films prepared by heterofullerene deposition

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Indexed keywords


EID: 85038320095     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.65.125321     Document Type: Article
Times cited : (1)

References (47)
  • 1
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    • edited by D. Emin, T.L. Aselage, and C. Woods, Mater. Res. Soc. Symp. Proc. No. 97 (MRS, Pittsburgh
    • Novel Refractory Semiconductors, edited by D. Emin, T.L. Aselage, and C. Woods, Mater. Res. Soc. Symp. Proc. No. 97 (MRS, Pittsburgh, 1987).
    • (1987) Novel Refractory Semiconductors
  • 21
    • 85038334803 scopus 로고    scopus 로고
    • addition to mass-spectrometric measurements, photofragmentation experiments on selected clusters sizes have been carried out. Size distribution and photofragmentation provide evidence of the presence of heterofullerenes in the beam. The complete procedure is given in Ref. 20
    • In addition to mass-spectrometric measurements, photofragmentation experiments on selected clusters sizes have been carried out. Size distribution and photofragmentation provide evidence of the presence of heterofullerenes in the beam. The complete procedure is given in Ref. 20.
  • 22
    • 0033993149 scopus 로고    scopus 로고
    • This amorphous state could be explained by the spread in sizes and stoichiometry x (formula presented) in the preformed clusters associated with the random distribution of the clusters on the substrate. In addition, the films appear nanogranular with a large void component between the deposited clusters. This involves a low film density associated with a large number of dangling bonds. However, the structure differs strongly from those observed in (formula presented) compounds, where the homogeneity of the random distribution is much more
    • This amorphous state could be explained by the spread in sizes and stoichiometry x (formula presented) in the preformed clusters associated with the random distribution of the clusters on the substrate. In addition, the films appear nanogranular with a large void component between the deposited clusters. This involves a low film density associated with a large number of dangling bonds. However, the structure differs strongly from those observed in (formula presented) compounds, where the homogeneity of the random distribution is much more. (P. Mélinon, et al., Philos. Mag. A 80, 143 (2000).
    • (2000) Philos. Mag. A , vol.80 , pp. 143
    • Mélinon, P.1
  • 24
    • 85038340688 scopus 로고    scopus 로고
    • The silver core-level line position remains constant before and after deposition. A depth profile obtained by ion etching does not reveal a significant shift due to silver-silicon or silver-carbon bonding
    • The silver core-level line position remains constant before and after deposition. A depth profile obtained by ion etching does not reveal a significant shift due to silver-silicon or silver-carbon bonding.
  • 25
    • 85038287748 scopus 로고    scopus 로고
    • Most of the reference samples must be cleaved and prepared in UHV conditions. Since our samples are prepared ex situ, a low contamination with oxygen and hydrocarbon compounds is observed. This contamination could affect the AES/XPS features (broadening, fine structure, etc.). In fact, we assume that the position of the main lines is not affected and the Auger parameter remains valid. The contamination of the samples can be reduced by argon-ion etching. However, etching involves an amorphization that strongly affects the electronic structure, in particular, for carbon
    • Most of the reference samples must be cleaved and prepared in UHV conditions. Since our samples are prepared ex situ, a low contamination with oxygen and hydrocarbon compounds is observed. This contamination could affect the AES/XPS features (broadening, fine structure, etc.). In fact, we assume that the position of the main lines is not affected and the Auger parameter remains valid. The contamination of the samples can be reduced by argon-ion etching. However, etching involves an amorphization that strongly affects the electronic structure, in particular, for carbon.
  • 27
    • 85038292554 scopus 로고    scopus 로고
    • Clusters are produced in a helium flux (formula presented) purity) without hydrogen. In an earlier work we checked by Fourier-transform infrared spectroscopy that Si-H or C-H modes gave a weak signal (Ref. 15)
    • Clusters are produced in a helium flux (formula presented) purity) without hydrogen. In an earlier work we checked by Fourier-transform infrared spectroscopy that Si-H or C-H modes gave a weak signal (Ref. 15).
  • 28
    • 0033686179 scopus 로고    scopus 로고
    • Previous measurements show that the stoichiometry in the film is correlated to the rod one. These assumptions are corroborated by Rutherford backscattering and energy dispersive x-ray spectroscopies performed on several systems
    • Previous measurements show that the stoichiometry in the film is correlated to the rod one. These assumptions are corroborated by Rutherford backscattering and energy dispersive x-ray spectroscopies performed on several systems [J.L. Rousset, et al., J. Phys. Chem. B 104, 5430 (2000)].
    • (2000) J. Phys. Chem. B , vol.104 , pp. 5430
    • Rousset, J.L.1
  • 29
    • 0004076374 scopus 로고
    • See, of NATO Advanced Studies Institute, Series B: Physics, edited by R. E. Clausing, L. L. Horton, J. C. Angus, and P. Koidl (Plenum Press, New York
    • See Diamond and Diamond-like Films and Coatings, Vol. 266 of NATO Advanced Studies Institute, Series B: Physics, edited by R. E. Clausing, L. L. Horton, J. C. Angus, and P. Koidl (Plenum Press, New York, 1991).
    • (1991) Diamond and Diamond-like Films and Coatings , vol.266
  • 32
    • 85038300781 scopus 로고    scopus 로고
    • The film is obtained by the deposition of (formula presented) clusters. For this purpose the rod is constituted by sintered (formula presented) powder
    • The film is obtained by the deposition of (formula presented) clusters. For this purpose the rod is constituted by sintered (formula presented) powder.
  • 45
    • 0000589349 scopus 로고
    • edited by D. Briggs and M.P. Seah (Wiley, New York
    • S.D. Waddington, in Practical Surface Analysis, edited by D. Briggs and M.P. Seah (Wiley, New York, 1990), Vol. 1, pp. 587-606.
    • (1990) Practical Surface Analysis , vol.1 , pp. 587-606
    • Waddington, S.D.1
  • 46
    • 85038307955 scopus 로고    scopus 로고
    • The Auger parameter is defined from the study of both Auger and photoelectron lines together in an XPS measurement. In our case, we use XPS and electron energy loss spectroscopy together. Moreover, the position of the Auger line is defined from the derivative signal rather than the Auger signal itself. Owing to this specific procedure, the Auger parameter does not coincide with usual value
    • The Auger parameter is defined from the study of both Auger and photoelectron lines together in an XPS measurement. In our case, we use XPS and electron energy loss spectroscopy together. Moreover, the position of the Auger line is defined from the derivative signal rather than the Auger signal itself. Owing to this specific procedure, the Auger parameter does not coincide with usual value.
  • 47
    • 33744598538 scopus 로고
    • edited by M. Cardona, P. Fulde, and H-J. Queisser, Solid-State Sciences, Springer-Verlag, Berlin
    • O. Madelung, in Introduction to Solid-State Theory, edited by M. Cardona, P. Fulde, and H-J. Queisser, Solid-State Sciences, Vol. 2 (Springer-Verlag, Berlin, 1981), p. 347.
    • (1981) Introduction to Solid-State Theory , vol.2 , pp. 347
    • Madelung, O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.