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IEEE Journal of Photovoltaics

Volumn 5, Issue 2, 2015, Pages 664-669

Recovery after potential-induced degradation of CuIn1-xGaxSe2 solar cells with CdS and Zn(O,S) buffer layers

(7) Fjallstrom V a Szaniawski, P a Vermang, B a Salome P M P a,b Rostvall, F a Zimmermann, U a Edoff, M a

a UPPSALA UNIVERSITY (Sweden)

b INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY (Portugal)

Author keywords

Buffer layer; Cu(In,Ga)Se2 (CIGS); potential induced degradation (PID); thin film solar cells

Indexed keywords

BUFFER LAYERS; CADMIUM SULFIDE; GALLIUM; OPTICAL WAVEGUIDES; RECOVERY; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; ZINC;

CDS; CU (IN ,GA)SE; ELECTRICAL PERFORMANCE; INDUCED DEGRADATION; RECOVERY METHODS; RECOVERY RATE; THIN FILM SOLAR CELLS; ZN(O ,S);

MOLECULAR BIOLOGY;

EID: 85027948551 PISSN: 21563381 EISSN: None Source Type: Journal
DOI: 10.1109/JPHOTOV.2014.2384839 Document Type: Article

Times cited : (37)

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