Wafer-Bonded GaInP/GaAs//Si Solar Cells With 30% Efficiency Under Concentrated Sunlight

IEEE Journal of Photovoltaics

Volumn 5, Issue 3, 2015, Pages 977-981

  Essig, Stephanie ^a   Benick, Jan ^b   Schachtner, Michael ^b   Wekkeli, Alexander ^b   Hermle, Martin ^b   Dimroth, Frank ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

III V semiconductor materials; Multijunction solar cell; silicon; wafer bonding

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EFFICIENCY; GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; THERMAL EXPANSION;

DUAL JUNCTION SOLAR CELL; ELECTRICALLY CONDUCTIVE; EXTERNAL QUANTUM EFFICIENCY; II-IV SEMICONDUCTORS; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTI JUNCTION SOLAR CELLS; THERMAL EXPANSION COEFFICIENTS; TRIPLE JUNCTION SOLAR CELLS;

WAFER BONDING;

EID: 85027931930     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2400212     Document Type: Article

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