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IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 4, 2008, Pages 642-646

Dielectric Charging in Electrostatically Actuated MEMS Ohmic Switches

(8) Peng, Zhen a Palego, Cristiano b Haider, Subrata b Hwang, James C M b Jahnes, Christopher V c Etzold, K F c Cotte, John M c Magerlein, John H c

a LEHIGH UNIVERSITY (United States)

b BROADCOM CORPORATION (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

Contact resistance; dielectric films; MEMS; microelectromechanical devices; microwave switches

Indexed keywords

EID: 85008049506 PISSN: 15304388 EISSN: 15582574 Source Type: Journal
DOI: 10.1109/TDMR.2008.2002539 Document Type: Article

Times cited : (10)

References (6)

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- N. Hoivik, C. V. Jahnes, J. Cotte, J. L. Lund, D. Seeger, and J. H. Magerlein, “RF MEMS switches using copper-based CMOS interconnect manufacturing technology,” in Proc. Tech. Dig. Solid-State Sensor Actuator Microsyst. Workshop, Jun. 2004, pp. 93–94.
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6
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- Top vs. bottom charging of the dielectric in RF MEMS capacitive switches
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- Z. Peng, X. Yuan, J. C. M. Hwang, D. Forehand, and C. L. Goldsmith, “Top vs. bottom charging of the dielectric in RF MEMS capacitive switches,” in Proc. Asia-Pacific Microw. Conf., Dec. 2006, pp. 1535–1538.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.