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Volumn 1616, Issue , 2014, Pages 37-40

Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

Author keywords

Germanium on porous silicon; III V solar cells on silicon; Porous silicon buffer layer; Virtual substrates

Indexed keywords


EID: 85006062493     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.4897023     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 8
    • 84870940879 scopus 로고    scopus 로고
    • Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer
    • M. Aouassa, S. Escoubas, A. Ronda, L. Favre, S. Gouder et al, Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer, App. Phhys. Lett.101, (2012) 233105
    • (2012) App. Phhys. Lett , vol.101 , pp. 233105
    • Aouassa, M.1    Escoubas, S.2    Ronda, A.3    Favre, L.4    Gouder, S.5
  • 9
    • 84890315853 scopus 로고    scopus 로고
    • Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy
    • S. Gouder, R. Mahamdi, M. Aouassa, S. Escoubas, L. Favre, A. Ronda, I. Berbezier, Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy Thin Solid Films, vol. 550, (2014) pp. 233-238
    • (2014) Thin Solid Films , vol.550 , pp. 233-238
    • Gouder, S.1    Mahamdi, R.2    Aouassa, M.3    Escoubas, S.4    Favre, L.5    Ronda, A.6    Berbezier, I.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.