A generalized theory explains the anomalous suns- VOC response of si heterojunction solar cells

IEEE Journal of Photovoltaics

Volumn 7, Issue 1, 2017, Pages 169-176

  Chavali, Raghu Vamsi Krishna ^a,b   Li, Jian V ^c   Battaglia, Corsin ^d   De Wolf, Stefaan ^e   Gray, Jeffery Lynn ^a   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

^b Corporation ^*  (United States)

^c Texas State University   (United States)

^d SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^e KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Amorphous semiconductors; current voltage (J V) characteristics; heterojunctions (HJs); modeling and simulation; silicon; solar cells or photovoltaics; Suns VOC

Indexed keywords

AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; COLLECTOR EFFICIENCY; CURRENT VOLTAGE CHARACTERISTICS; EFFICIENCY; ELECTRIC RESISTANCE; HETEROJUNCTIONS; MOLYBDENUM OXIDE; PHOTOVOLTAIC EFFECTS; SILICON; SOLAR POWER GENERATION;

A-SI/C-SI HETEROJUNCTIONS; CARRIER TRANSPORT BARRIERS; CURRENT VOLTAGE; HETEROJUNCTION SOLAR CELLS; MODEL AND SIMULATION; PARASITIC SERIES RESISTANCE; PHOTOVOLTAIC TECHNOLOGY; PHOTOVOLTAICS;

SOLAR CELLS;

EID: 84997795082     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2016.2621346     Document Type: Article

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