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Volumn 26, Issue 25, 2014, Pages 4376-4380

Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3

(12) Seidel, Jan a,b,c Trassin, Morgan d,e Zhang, Yi f Maksymovych, Peter g Uhlig, Tino h Milde, Peter h Köhler, Denny h Baddorf, Arthur P g Kalinin, Sergei V g Eng, Lukas M h Pan, Xiaoqing f Ramesh, Ramamoorthy b,c,d

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c UNIVERSITY OF CALIFORNIA (United States)

d University of California Berkeley (United States)

e ETH ZURICH (Switzerland)

f UNIVERSITY OF MICHIGAN (United States)

g OAK RIDGE NATIONAL LABORATORY (United States)

h DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

complex oxides; electronic properties; interfaces; nanotechnology; phase boundaries

Indexed keywords

ELECTRIC CONDUCTIVITY; FERRITE; INTERFACES (MATERIALS); NANOTECHNOLOGY; PHASE BOUNDARIES;

BISMUTH FERRITES; COMPLEX OXIDES; DEGREE OF CONTROL; ELECTRICAL SWITCHING; ELECTRONIC CONDUCTIVITY; HIGHLY STRAINED; NANO SCALE; STRONG CORRELATION;

ELECTRONIC PROPERTIES;

EID: 84903730803 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201400557 Document Type: Article

Times cited : (78)

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