Inherent stochasticity in phase-change memory devices

European Solid-State Device Research Conference

Volumn 2016-October, Issue , 2016, Pages 373-376

  Le Gallo, Manuel ^a   Tuma, Tomas ^a   Zipoli, Federico ^a   Sebastian, Abu ^a   Eleftheriou, Evangelos ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

LEARNING SYSTEMS; NUMBER THEORY; RANDOM NUMBER GENERATION; SOLID STATE DEVICES; STOCHASTIC SYSTEMS;

AMORPHOUS PHASE; ATOMIC CONFIGURATION; MEMORY SWITCHING; NEUROMORPHIC ENGINEERING; STOCHASTIC BEHAVIOR; STOCHASTIC COMPUTING; THRESHOLD SWITCHING; TWO-TERMINAL NANOSCALE;

PHASE CHANGE MEMORY;

EID: 84994410799     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2016.7599664     Document Type: Conference Paper

References (17)

1. G. W. Burr, M. J. Brightsky, A. Sebastian, H.-Y. Cheng, J.-Y. Wu, S. Kim, N. E. Sosa, N. Papandreou, H.-L. Lung, H. Pozidis et al., "Recent progress in phase-change memory technology," IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016.
2. D. Kuzum, R. Jeyasingh, B. Lee, and H.-S. P. Wong, "Nanoelectronic programmable synapses based on phase change materials for braininspired computing," Nano Letters, vol. 12, no. 5, pp. 2179-2186, 2011.
3. T. Tuma, A. Pantazi, M. Le Gallo, A. Sebastian, and E. Eleftheriou, "Stochastic phase-change neurons," Nature Nanotechnology, 2016.
4. P. Hosseini, A. Sebastian, N. Papandreou, C. D. Wright, and H. Bhaskaran, "Accumulation-based computing using phase-change memories with FET access devices," IEEE Electron Device Letters, vol. 36, no. 9, pp. 975-977, 2015.
5. F. Zipoli, D. Krebs, and A. Curioni, "Structural origin of resistance drift in amorphous GeTe," Physical Review B, vol. 93, no. 11, p. 115201, 2016.
6. M. Breitwisch, T. Nirschl, C. Chen, Y. Zhu, M. Lee, M. Lamorey, G. Burr, E. Joseph, A. Schrott, J. Philipp et al., "Novel lithographyindependent pore phase change memory," in Proc. IEEE Symposium on VLSI Technology, 2007, pp. 100-101.
7. M. Le Gallo, M. Kaes, A. Sebastian, and D. Krebs, "Subthreshold electrical transport in amorphous phase-change materials," New Journal of Physics, vol. 17, no. 9, p. 093035, 2015.
8. M. Le Gallo, A. Athmanathan, D. Krebs, and A. Sebastian, "Evidence for thermally assisted threshold switching behavior in nanoscale phasechange memory cells," Journal of Applied Physics, vol. 119, no. 2, p. 025704, 2016.
9. A. Sebastian, M. Le Gallo, and D. Krebs, "Crystal growth within a phase change memory cell," Nature Communications, vol. 5, no. 4314, 2014.
10. A. V. Kolobov, P. Fons, A. I. Frenkel, A. L. Ankudinov, J. Tominaga, and T. Uruga, "Understanding the phase-change mechanism of rewritable optical media," Nature materials, vol. 3, no. 10, pp. 703-708, 2004.
11. A. Alaghi and J. P. Hayes, "Survey of stochastic computing," ACM Transactions on Embedded computing systems (TECS), vol. 12, no. 2s, p. 92, 2013.
12. L. K. Muller and G. Indiveri, "Rounding methods for neural networks with low resolution synaptic weights," arXiv preprint arXiv:1504.05767, 2015.
13. W. Maass, "Noise as a resource for computation and learning in networks of spiking neurons," Proceedings of the IEEE, vol. 102, no. 5, pp. 860-880, 2014.
14. S. Balatti, S. Ambrogio, Z. Wang, and D. Ielmini, "True random number generation by variability of resistive switching in oxide-based devices," IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 5, no. 2, pp. 214-221, 2015.
15. K. Yang, D. Fick, M. B. Henry, Y. Lee, D. Blaauw, and D. Sylvester, "A 23Mb/s 23pJ/b fully synthesized true-random-number generator in 28nm and 65nm CMOS," in Proc. ISSCC, 2014, pp. 280-281.
16. "A statistical test suite for random and pseudorandom number generators for cryptographic applications," National Inst. Standards and Technology, Tech. Rep. Pub 800-22 Rev 1a, 2010.
17. Y. Peres, "Iterating von Neumann's procedure for extracting random bits," The Annals of Statistics, vol. 20, no. 1, pp. 590-597, 1992.