Spin-polarized valley hall effect in ultrathin silicon nanomembrane via interlayer antiferromagnetic coupling

2D Materials

Volumn 3, Issue 3, 2016, Pages

  Sun, Jia Tao ^a,b   Wang, Zhengfei ^b,c   Meng, S ^a   Du, Shixuan ^a   Liu, F ^b   Gao, H J ^a  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF UTAH   (United States)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Circular photogalvanic effect; Layer antiferromagnetic exchange coupling; Silicon nanomembrane; Valleytronics

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; CALCULATIONS; CHEMICAL INDUSTRY; DEGREES OF FREEDOM (MECHANICS); EXCHANGE COUPLING; LANDFORMS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; NANOSTRUCTURES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SPIN POLARIZATION;

ANTIFERROMAGNETIC EXCHANGE COUPLING; DEGREE OF FREEDOM; FIRST-PRINCIPLES CALCULATION; INTERLAYER ANTIFERROMAGNETIC COUPLING; PHOTOGALVANIC EFFECTS; SILICON NANOMEMBRANE; TWO-DIMENSIONAL MATERIALS; VALLEYTRONICS;

SPIN HALL EFFECT;

EID: 84992344894     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/3/3/035026     Document Type: Article

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