Coupling the valley degree of freedom to antiferromagnetic order

Proceedings of the National Academy of Sciences of the United States of America

Volumn 110, Issue 10, 2013, Pages 3738-3742

  Li, Xiao ^a   Cao, Ting ^a,b   Niu, Qian ^a,c   Shi, Junren ^a   Feng, Ji ^a  

^a PEKING UNIVERSITY   (China)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Antiferromagnetism; Valleytronics

Indexed keywords

FERROMAGNETIC MATERIAL; MANGANESE;

ARTICLE; CHEMICAL BOND; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRONICS; ELECTROSPINNING; PHYSICS; PRIORITY JOURNAL; QUANTUM YIELD;

EID: 84874628634     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1219420110     Document Type: Article

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