Characterization of via etching in CHF3/CF4 magnetically enhanced reactive ion etching using neural networks

ETRI Journal

Volumn 24, Issue 3, 2002, Pages 211-220

  Kwon, Sung Ku ^a   Kwon, Kwang Ho ^b   Kim, Byung Whan ^c   Park, Jong Moon ^a   Yoo, Seong Wook ^a   Park, Kun Sik ^a   Bae, Yoon Kyu ^a   Kim, Bo Woo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Hanseo University   (South Korea)

^c Sejong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; SILICA; TIN; TITANIUM NITRIDE;

ETCH SELECTIVITY; ETCHING MECHANISM; ETCHING UNIFORMITY; GAS COMPOSITIONS; MAGNETICALLY ENHANCED REACTIVE ION ETCHINGS; OPTIMUM ETCHING CONDITION; PROCESS CONDITION; PROCESS PRESSURE;

REACTIVE ION ETCHING;

EID: 84983313544     PISSN: 12256463     EISSN: 22337326     Source Type: Journal    
DOI: 10.4218/etrij.02.0102.0305     Document Type: Article

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