Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-August, Issue , 2003, Pages 42-48

  Armstrong, A ^a   Arehart, A R ^a   Moran, B ^b   DenBaars, S P ^b   Mishra, U K ^b   Speck, J S ^b   Ringel, S A ^a  

^a Ohio State University   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATMOSPHERIC PRESSURE; CARBON; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEPOSITION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS;

BANDGAP STATE; DEEP LEVEL OPTICAL SPECTROSCOPY; DEFECT SPECTRA; GROWTH PRESSURE; LOW CONCENTRATIONS; LOW PRESSURES; REDUCED PRESSURE; TRAP STATE;

VAPOR DEPOSITION;

EID: 84979226388     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCSPC.2003.1354429     Document Type: Conference Paper

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