Temperature dependence of contact resistance at metal/MWNT interface

Applied Physics Letters

Volumn 109, Issue 2, 2016, Pages

  Lee, Sang Eui ^a   Moon, Kyoung Seok ^a   Sohn, Yoonchul ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARBON; CARBON NANOTUBES; CHEMICAL ACTIVATION; CONTACT RESISTANCE; ELECTRODES; ELECTRON TUNNELING; MULTIWALLED CARBON NANOTUBES (MWCN); NANOTUBES; TEMPERATURE DISTRIBUTION; YARN;

CONDUCTIVITY ENHANCEMENT; ELECTRICAL RESISTANCES; ELECTRONIC DEVICE; INCREASING TEMPERATURES; INTRINSIC RESISTIVITY; MULTI-WALLED NANOTUBES; TEMPERATURE DEPENDENCE; THERMAL FLUCTUATIONS;

TEMPERATURE;

EID: 84978782667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4958840     Document Type: Article

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