Semiconductor behaviors of low loading multiwall carbon nanotube/poly(dimethylsiloxane) composites

Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

  Hu, C H ^a   Liu, C H ^a   Chen, L Z ^a   Fan, S S ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB GAPS; DIMETHYLSILOXANE; DRAIN VOLTAGE; EFFECTIVE MOBILITIES; FLEXIBLE ELECTRONICS; HIGH QUALITY; LINEAR TRANSCONDUCTANCE; LOW LOADING; MULTI-WALL CARBON NANOTUBES; P-TYPE BEHAVIORS; SEMICONDUCTOR BEHAVIOR; TEMPERATURE DATA; VARIABLE RANGE HOPPING MODEL;

CARBON NANOTUBES; MULTIWALLED CARBON NANOTUBES (MWCN);

FIELD EFFECT TRANSISTORS;

EID: 70249100239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3223777     Document Type: Article

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