Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks

ACS Nano

Volumn 4, Issue 7, 2010, Pages 4027-4032

  Yanagi, Kazuhiro ^a   Udoguchi, Hiroki ^a   Sagitani, Satoshi ^a   Oshima, Yugo ^b   Takenobu, Taishi ^c   Kataura, Hiromichi ^d,e   Ishida, Takao ^d   Matsuda, Kazuyuki ^a   Maniwa, Yutaka ^a,e  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

^b RIKEN   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

carbon nanotube; metallic and semiconducting types; transport mechanisms; variable range hopping; weak localization

Indexed keywords

CONDUCTING FILMS; CONDUCTION MECHANISM; HIGH CONDUCTIVITY; HIGH-PURITY; LOCALIZED ELECTRONS; LOCALIZED STATE; NANOTUBE NETWORKS; QUANTUM TRANSPORT; SINGLE-WALL CARBON NANOTUBES; TRANSPORT MECHANISM; VARIABLE RANGE HOPPING; WEAK LOCALIZATION;

CARBON FILMS; CARBON NANOTUBES; CONDUCTIVE FILMS; COULOMB INTERACTIONS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; THIN FILM TRANSISTORS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 77955533264     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn101177n     Document Type: Article

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