SCOPUS 정보 검색 플랫폼

Volumn 28, Issue 22, 2016, Pages 4441-4448

Mechanically Durable and Highly Stretchable Transistors Employing Carbon Nanotube Semiconductor and Electrodes

(14) Chortos, Alex a Koleilat, Ghada I a Pfattner, Raphael a Kong, Desheng a Lin, Pei b Nur, Roda a Lei, Ting a Wang, Huiliang a Liu, Nan a Lai, Ying Chih a,c Kim, Myung Gil a,d Chung, Jong Won a,e Lee, Sangyoon e Bao, Zhenan a

a Stanford University (United States)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

d Chung Ang University (South Korea)

e Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

carbon nanotubes; stretchable electronics; stretchable transistor

Indexed keywords

ELECTRODES; GATE DIELECTRICS; REFRACTORY METAL COMPOUNDS; SILICON WAFERS; SOLVENTS; SUBSTRATES; TRANSISTORS;

DEVICE CHARACTERISTICS; ELECTRICAL MEASUREMENT; PERCOLATION THRESHOLDS; POLY(3-DODECYLTHIOPHENE); SOURCE AND DRAIN ELECTRODES; STRETCHABLE ELECTRONICS; STRETCHING DIRECTION; THERMOPLASTIC POLYURETHANES;

CARBON NANOTUBES;

EID: 84973165856 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201501828 Document Type: Article

Times cited : (242)

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