Point contacts at the copper-indium-gallium-selenide interface - A theoretical outlook

Journal of Applied Physics

Volumn 119, Issue 15, 2016, Pages

  Bercegol, Adrien ^a,c   Chacko, Binoy ^a,d   Klenk, Reiner ^a   Lauermann, Iver ^a   Lux Steiner, Martha Ch ^a   Liero, Matthias ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

^c ECOLE POLYTECHNIQUE   (France)

^d FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; COPPER; DEFECT DENSITY; EFFICIENCY; ENERGY GAP; GALLIUM; HETEROJUNCTIONS; INDIUM; OPEN CIRCUIT VOLTAGE; PASSIVATION; POINT CONTACTS;

CONDUCTION BAND OFFSET; DEVICE PERFORMANCE; HIGH-EFFICIENCY SOLAR CELLS; POSITIVE SURFACE CHARGE; POST DEPOSITION TREATMENT; POTASSIUM FLUORIDES; SPACE CHARGE REGIONS; THREE DIMENSIONAL SIMULATIONS;

SOLAR CELLS;

EID: 84966377253     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4947267     Document Type: Article

References (23)

1. A. Chirila, P. Reinhard, F. Pianezzi, P. Bloesch, A. R. Uhl, C. Fella, L. Kranz, D. Keller, C. Gretener, H. Hagendorfer, D. Jaeger, R. Erni, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, " Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells," Nat. Mater. 12, 1107-1111 (2013). 10.1038/nmat3789
2. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, " Solar cell efficiency tables(version 45)," Prog. Photovolt.: Res. Appl. 23 (1), 1-9 (2015). 10.1002/pip.2573
3. P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, " New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20. 8%," Prog. Photovolt.: Res. Appl. 19, 894-897 (2011). 10.1002/pip.1078
4. 2 solar cells with new record efficiencies up to 21.7%," Phys. Status Solidi RRL 9, 28-31 (2015). 10.1002/pssr.201409520
5. J. Zhao, A. Wang, and M. A. Green, " 24% Efficient PERL structure silicon solar cells," in Proceedings of the 21st IEEE PVSC (1990), pp. 333-335.
6. J. A. Giesecke, M. Kasemann, and W. Warta, " Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images," J. Appl. Phys. 106, 014907 (2009). 10.1063/1.3157200
7. R. Scheer and H.-W. Schock, Chalcogenide Photovoltaic: Physics, Technologies, and Thin Film Devices (Wiley, 2011).
8. B. Vermang, J. T. Wätjen, V. Fjällström, F. Rostvall, M. Edoff, R. Kotipalli, F. Henry, and D. Flandre, " Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells," Prog. Photovolt: Res. Appl. 22, 1023-1029 (2014). 10.1002/pip.2527
9. Y. Fu, N. Allsop, S. E. Gledhill, T. Köhler, M. Krüger, R. Saez-Araoz, U. Blöck, M. Ch. Lux-Steiner, and Ch-H. Fischer, " ZnS nanodot film as defect passivation layer for CIGS thin-film solar cells deposited by Spray-ILGAR," Adv. Energy Mater. 1, 561-564 (2011). 10.1002/aenm.201100146
10. P. Reinhard, B. Bissig, F. Pianezzi, H. Hagendorfer, G. Sozzi, R. Menozzi, C. Gretener, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, " Alkali-templated surface nanopatterning of chalcogenide thin films: A novel approach towards solar cells with enhanced efficiency," Nano Lett. 15, 3334-3340 (2015). 10.1021/acs.nanolett.5b00584
11. See http://www.wias-berlin.de/software/tesca for WIAS-TeSCA, Modeling and simulation of Semiconductor Devices.
12. M. Burgelman, P. Nollet, and S. Degrave, " Modelling polycrystalline semiconductor solar cells," Thin Solid Films 361-362, 527-532 (2000). 10.1016/S0040-6090(99)00825-1
13. M. N. Allsop, R. Nürnberg, M. Ch. Lux-Steiner, and Th. Schedel-Niedrig, " Three-dimensional simulations of a thin film heterojunction solar cell with a point contact/defect passivation structure at the heterointerface," Appl. Phys. Lett. 95, 122108 (2009). 10.1063/1.3233962
14. M. Nerat, " CIGS solar cells with localized back contacts for achieving high performance," Sol. Energy Mater. 104, 152-158 (2012). 10.1016/j.solmat.2012.05.020
15. Y. Fu, " Spray-ILGAR deposition of controllable ZnS nanodots and application as passivation/point contact at junction In 2 S 3 / Cu (In, Ga) (S, Se) 2 in thin film solar cells," Ph.D. thesis, HZB, 2012.
16. R. Klenk, " Characterisation and modelling of chalcopyrite solar cells," Thin Solid Films 387, 135-140 (2001). 10.1016/S0040-6090(00)01736-3
17. T. Minemoto, T. Matsui, H. Takakura, Y. Hamakawa, T. Negami, Y. Hashimoto, T. Uenoyama, and M. Kitagawa, " Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation," Sol. Energy Mater. 67, 83-88 (2001). 10.1016/S0927-0248(00)00266-X
18. M. Gloeckler and J. R. Sites, " Efficiency limitations for wide-band-gap chalcopyrite solar cells," Thin Solid Films 480-481, 241-245 (2005). 10.1016/j.tsf.2004.11.018
19. 2 thin films for high efficiency solar cells," Ph.D. thesis, Uppsala University, 2006.
20. 2 solar cells," Thin Solid Films 519, 7472-7475 (2011). 10.1016/j.tsf.2011.01.092
21. O. Cojocaru-Miredin, Y. Fu, A. Kostka, R. Saez-Araoz, A. Beyer, N. Knaub, Ch-H. Fischer, and D. Raabe, " Interface engineering and characterization at the atomic-scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin film solar cells," Prog. Photovolt.: Res. Appl. 23, 705-716 (2015). 10.1002/pip.2484
22. R. Hunger, T. Schulmeyer, M. Lebedev, A. Klein, W. Jaegermann, R. Hied, M. Powalla, K. Sakurai, and S. Niki, " Removal of the surface inversion of CIS absorbers by NH3 etching," in 3rd World Conference on Energy Conversion, May 2003, Osaka, Japan.
23. 2 solar cell material," J. Phys. Chem. 117, 25933-25938 (2013). 10.1021/jp4087877