Ultra-low-noise, InP field effect transistor radio astronomy receivers: State-of-the-art

13th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2000

Volumn 3, Issue , 2000, Pages 23-32

  Pospieszalski, M W ^a   Wollack, E J ^b  

^a NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADAR; RADIO ASTRONOMY; WIRELESS TELECOMMUNICATION SYSTEMS;

FREQUENCY RANGES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; STATE OF THE ART; ULTRA LOW NOISE;

FIELD EFFECT TRANSISTORS;

EID: 84962833535     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIKON.2000.914041     Document Type: Conference Paper

References (38)

1. S. Weinreb, "Low-noise, cooled GASFET amplifiers," IEEE Trans. Microwave Theory Tech., vol. 28, pp. 1041-1054, Oct. 1980.
2. S. Weinreb et al., "Ultra low-noise, 1.2-1.7 GHz, cooled GASFET amplifiers," IEEE Trans. Microwave Theory Tech., vol. 30, pp. 849-853, June 1982.
3. P. L. Richards et al., "Quasi-particle heterodyne- mixing in SIS tunnel junctions," Appl. Physics Lett., 34(5), pp. 345-347, 1979.
4. J. R. Tucker, "Quantum-limited detection in tunnel junction mixers," IEEE J. of Quantum Electron., vol. QE-15, pp. 1234-1258, 1979.
5. A. R. Kerr and S.-K. Pan, "Some recent developments in the design of SIS mixers," Int. J. Infrared & Millimeter Waves, vol. 11, no. 10, pp. 1169-1187, Oct. 1990.
6. M. W. Pospieszalski et al., "Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMT's," in Proc. 1993 IEEE MTT-S Int. Microwave Symp., Atlanta, GA, pp. 515-518, June 1993.
7. M. W. Pospieszalski, "Ultra-low-noise receivers for the 1 to 120 GHz frequency range," (invited) in Proc. of 23rd European Microwave Conf., Madrid, Spain, pp. 73-79, Sept. 1993.
8. Proc. of 10th Int. Symp. on Space Terahertz Tech., Charlottesville, VA, March 1999.
9. L. D. Nguyen, L. E. Larson and U. K. Mishra, "Ultra-high-speed modulation doped field effect transistors," in Proc. IEEE, vol. 80, pp. 494-518, April 1992.
10. H. Fukui, "Optimal noise figure of microwave GaAs MESFET's," IEEE Trans. Electron Devices, vol. ED-26, pp. 1032-1037, July 1979.
11. M. W. Pospieszalski, "Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence," IEEE Trans. on Microwave Theory and Tech., vol. 37, pp. 1340-1350, Sept. 1989.
12. M. W. Pospieszalski, "Cryogenically-cooled, HFET amplifiers and receivers: state-of-the-art and future trends," in Proc. 1992 Int. Microwave Symp., Albuquerque, NM, pp. 1369-1372, 1992.
13. K. H. G. Duh et al., "A super low-noise .1 μm T-gate InAlAs-InGaAs-InP HEMT," IEEE Microwave Guided Wave Lett., vol. 1, pp. 114-116, May 1991.
14. S. E. Rosenbaum et al., "AlInAs/GalnAs on InP HEMT low-noise MMIC amplifiers," in Proc. 1991 Int. Microwave Symp., pp. 815-819, Boston, MA, June 1991.
15. P. D. Chow et al., "W-band and D-band low noise amplifiers using 0.1 micron pseudomorphic InAlAs/InGaAs/InP HEMT's," in Proc. 1992 Int. Microwave Symp., pp. 807-810, Albuquerque, NM, June 1992.
16. P. M. Smith, "Status of InP HEMT technology for microwave receiver application," (invited), in Proc. 1996 Int. Microwave Symp., San Francisco, CA, pp. 5-8, June 1996.
17. M. W. Pospieszalski et al., "Q- and E-band cryogenically-coolable amplifiers using AlInAs/GalnAs/InP HEMT's," in Proc. 1995 IEEE MTT-S Int. Microwave Symp., Orlando, FL, pp. 1121-1124, May 1995.
18. M. W. Pospieszalski et al., "Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers," Proc. 1997 IEEE MTT-S Int. Microwave Symp., Denver, CO, pp. 2285-1288, June 1997.
19. C. A. Liechti and G. B. Larrick, "Performance of GaAs MESFET's at low temperature," IEEE Trans. Microwave Theory Tech., vol. 24, pp. 376-381, June 1976.
20. K. H. G. Duh et al., "Ultra-low-noise, cryogenic, high-electron-mobility transistors," IEEE Trans. Electron Devices, vol. 35, pp. 249-256, March 1988.
21. x, gates," IEEE Trans. Electron Devices, vol. 39, pp. 515-519, March 1992.
22. S. Weinreb et al., "Cryogenic, HEMT, low- noise receivers for 1.3 to 43 GHz range," in Proc. 1988 MTT-S Int. Microwave Symp., New York, NY, pp. 945-948, May 1988.
23. E. J. Wollack et al., "An instrument for investigation of the cosmic microwave background radiation at intermediate angular scales," Ap. J., vol. 476, pp. 440-457, Feb. 1997.
24. C. Bennet et al., "Microwave anisotropy probe (MAP) MIDEX proposal," NASA Goddard Space Flight Center, Greenbelt, MD, Dec. 1995. [http://www.map.gsfc.nasa.gov]
25. E. J. Wollack, "High-electron-mobility transistor gain stability and its design implications for wide band millimeter-wave receivers," Rev. Sci. Instrum., vol. 66, pp. 4305-4312, 1995.
26. N. Jarosik, "Measurement of the low frequency gain fluctuations of a 30 GHz HEMT cryogenic amplifier," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 193-197, Feb. 1996.
27. E. J. Wollack and M. W. Pospieszalski, "Characteristics of broadband InP millimeter-wave amplifiers for radiometry," Proc. 1998 IEEE MTT-S Int. Microwave Symp., Baltimore, MD, pp. 669-772, June 1998.
28. J. C. Webber, A. R. Kerr, S.-K. Pan and M. W. Pospieszalski, "Receivers for the millimeter array," presented at SPlE's Int. Symp. on Astronomical Telescopes & Instrumentation, Kona, Hawaii, March 20-18, 1998.
29. Y. L. Kok et al., "160-190 GHz monolithic low-noise amplifiers," Microwave and Guided Wave Letters, vol. 9, pp. 314-316, August 1999.
30. S. Weinreb, R. Lai, N. Erickson, T. Gaier and J. Wielgus, "W-band InP wideband MMIC LNA with 30 K noise temperature," in Proc. 1999 IEEE MTT-S Int. Microwave Symp., pp. 101-104, Anaheim, CA, June 1999.
31. S. Weinreb et al., "High-gain 150-215 GHz MMIC amplifier with integral waveguide transitions," IEEE Microwave and Guided Wave Letters, vol. 9, pp. 282-284, July 1999.
32. M. W. Pospieszalski and A. C. Niedzwiecki, "FET noise model and on-wafer measurement of noise parameters," in Proc. 1991 IEEE MTT-S Int. Microwave Symp., Boston, MA, pp. 1117-1120, June 1991.
33. P. J. Tasker, W. Reinert, J. Braunstein, and M. Schlechtweg, "Direct extraction of all four transistor noise parameters from a single noise figure measurement, in Proc. 1992 Eur. Microwave Conf., Helsinki, Finland, pp. 157-162, August 1992.
34. P. Heymann et al., "Experimental evaluation of microwave field-effect-transistor noise models, "IEEE Trans. Microwave Theory Tech., vol. 47, pp. 156-163, Feb. 1999.
35. J. Lopez-Fernandez et al., "Low-noise cryogenic X-band amplifier using wet-etched hydrogen passivated InP HEMT devices," IEEE Microwave and Guided Wave Letters, vol. 9, pp. 413-415, Oct. 1999.
36. M. W. Pospieszalski et al., "Design and performance of wideband, low-noise, millimeter-wave amplifiers for microwave anisotropy probe radiometers," to be presented at the IEEE Int. Microwave Symp., Boston, MA, June 11-16, 2000.
37. N. R. Erickson et al., "A cryogenic focal plane array for 85-115 GHz using MMIC preamplifiers," in Proc. 1999 IEEE MTT-S Int. Microwave Symp., Anaheim, CA, pp. 251-254, June 1999.
38. M.W. Pospieszalski, "HFET's and receivers for the millimeter-wave array," MMA Memo No. 67, National Radio Astronomy Observatory, Charlottesville, VA, August 12, 1991.