W-band INP wideband MMIC LNA with 30K noise temperature

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1999, Pages 101-104

  Weinreb, S ^a   Lai, R ^a   Erickson, N ^a   Gaier, T ^a   Wielgus, J ^a  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; TEMPERATURE; WAVEGUIDES;

LOW NOISE AMPLIFIERS; NOISE TEMPERATURE;

MICROWAVE AMPLIFIERS;

EID: 0033363609     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)