SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 106, Issue , 2013, Pages 214-218

Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thickness

(7) Yang, C C a Baumann, F b Wang, P C b Lee, S Y c Ma, P c Aubuchon, J c Edelstein, D a

a IBM RESEARCH (United States)

b IBM MICROELECTRONICS (United States)

c APPLIED MATERIALS INC (United States)

Author keywords

Cobalt; Cu interconnects; Metal cap; Reliability; Selective deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COBALT; COPPER; DEPOSITION; ELECTROMIGRATION; RELIABILITY; VAPOR DEPOSITION;

CU-INTERCONNECTS; DEPOSITION PRESSURES; DIELECTRIC SURFACE; ELECTROMIGRATION RESISTANCE; LIFETIME ENHANCEMENT; METAL CAP; PRE-CLEAN PROCESS; SELECTIVE DEPOSITION;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84962709407 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.01.001 Document Type: Conference Paper

Times cited : (16)

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