In-situ barrier formation for high reliable W/barrier/poly-Si gate using denudation of WNx on polycrystalline Si

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 385-388

  Lee, Byung Hak ^a   Sohn, Dong Kyun ^a   Park, Ji Soo ^a   Han, Chang Hee ^a   Huh, Yun Jun ^a   Byun, Jeong Soo ^a   Kim, Jae Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; NITROGEN; OXIDATION; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; TUNGSTEN; TUNGSTEN COMPOUNDS;

IN SITU BARRIER FORMATION; TUNGSTEN NITRIDE;

GATES (TRANSISTOR);

EID: 0032255092     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)