Antimony assisted arsenic S/D extension (A3 SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 63-66

  Wang, Howard C H ^a   Wang, C C ^a   Hsieh, C H ^a   Lu, S Y ^a   Chiang, M C ^a   Chu, Y L ^a   Chen, C J ^a   Ong, T C ^a   Wang, Tahui ^a   Griffin, Peter B ^a   Diaz, Carlos H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; HOT CARRIERS; LEAKAGE CURRENTS; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ANTIMONY ASSISTED ARSENIC SOURCE-DRAIN EXTENSION; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; NANOSCALE MOSFETS;

MOSFET DEVICES;

EID: 19244384382     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)