Process performance for Axcelis MC3 300 mm implanter

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 364-367

  Rathmell, R D ^a   Ray, A M ^a   Sato, F ^b   Godfrey, C J ^a  

^a AXCELIS TECHNOLOGIES   (United States)

^b Sumitomo Eaton Nova Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

300 MM WAFERS; BEAM PARALLELISM; BEAM TRANSPORT; EVOLUTIONARY DESIGN; MEDIUM-CURRENT IMPLANTER; PARTICLE CONTAMINATION; PROCESS PERFORMANCE;

ION IMPLANTATION;

EID: 78649872157     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924163     Document Type: Conference Paper

References (7)

1. O. F. Campbell, A. M. Ray, M. Sugitani, and F. Sato, "Introducing the MC3 Medium Current 300 mm Implanter", in IEEE 1998 International Conference on Ion Implantation Teclviology Proceedings, Kyoto, Japan, pp. 154-157
2. J. M. Harlan and K. Petry, "Overview of the Eaton 8250 Medium Current Implanter", in IEEE 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, pp. 266-269
3. R. D. Rathmcll, D. E. Kamenitsa, M. L. King, and A. M. Ray, "Beam Parallelism in the 82S0 Medium Current Implanter", in IEEE 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, pp. 392-395
4. th International Conference on Ion Implantation Technology, Austin, Texas, 1996, pp. 143-146
5. International Standard ISO/DIS 14644-1.
6. D. E. Kamenitsa and R. D. Rathmell, "Beam Energy Purity in the Eaton NV-8200P Ion Implanter", Nucl. Instr. and Meth. B 96 (1995), pp. 13-17.
7. R. D. Rathmell, M. L. King, D. E. Kamenitsa, and M. A. Rathmell, "Rejection ofP+ Contamination in P++ Implants on the 8250", in IEEE 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, pp. 622-625