Low-temperature Ni particle-templated chemical vapor deposition growth of curved graphene for supercapacitor applications

Nano Energy

Volumn 13, Issue , 2015, Pages 458-466

  Zhou, Shuang ^a   Xu, Junling ^a   Xiao, Yubin ^a   Zhao, Ni ^a   Wong, Ching Ping ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

APCVD; Curved graphene; Growth mechanism; Low temperature; Supercapacitor

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ELECTROCHEMICAL ELECTRODES; ELECTROLYTES; METHANE; NICKEL; PARTICLE SIZE; POTASSIUM HYDROXIDE; SUPERCAPACITOR; SURFACE DEFECTS; TEMPERATURE;

APCVD; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; DEPOSITION TEMPERATURES; GROWTH MECHANISMS; HIGH ENERGY DENSITIES; LOW TEMPERATURE GROWTH; LOW TEMPERATURES; SUPERCAPACITOR APPLICATION;

GRAPHENE;

EID: 84961291226     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2015.03.010     Document Type: Article

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